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A Facile Route for Producing Single-Crystalline Epitaxial Perovskite Oxide Thin FilmsAKBASHEV, Andrew R; GUANNAN CHEN; SPANIER, Jonathan E et al.Nano letters (Print). 2014, Vol 14, Num 1, pp 44-49, issn 1530-6984, 6 p.Article

Atomic layer deposition of high-quality Al₂O₃ and Al-doped TiO₂ thin films from hydrogen-free precursorsAARIK, Lauri; ARROVAL, Tõnis; RAMMULA, Raul et al.Thin solid films. 2014, Vol 565, pp 19-24, issn 0040-6090, 6 p.Article

Bending properties of organic-inorganic multilayer moisture barriersSEO, Seung-Woo; EUN JUNG; HEEYEOP CHAE et al.Thin solid films. 2014, Vol 550, pp 742-746, issn 0040-6090, 5 p.Article

Crystallization and semiconductor-metal switching behavior of thin VO₂ layers grown by atomic layer depositionRAMPELBERG, Geert; DEDUYTSCHE, Davy; DE SCHUTTER, Bob et al.Thin solid films. 2014, Vol 550, pp 59-64, issn 0040-6090, 6 p.Article

Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001) GaN by Metalorganic Chemical Vapor DepositionJIE SONG; GE YUAN; KANGLIN XIONG et al.Crystal growth & design. 2014, Vol 14, Num 5, pp 2510-2515, issn 1528-7483, 6 p.Article

Growth of Ga(AsBi) on GaAs by continuous flow MOVPELUDEWIG, P; BUSHELL, Z. L; NATTERMANN, L et al.Journal of crystal growth. 2014, Vol 396, pp 95-99, issn 0022-0248, 5 p.Article

Highly porous carbon spheres for electrochemical capacitors and capacitive flowable suspension electrodesCHUANFANG ZHANG; HATZELL, Kelsey B; BOOTA, Muhammad et al.Carbon (New York, NY). 2014, Vol 77, pp 155-164, issn 0008-6223, 10 p.Article

Holmium and titanium oxide nanolaminates by atomic layer depositionKUKLI, Kaupo; JUN LU; RITALA, Mikko et al.Thin solid films. 2014, Vol 565, pp 165-171, issn 0040-6090, 7 p.Article

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Photoluminescence from GaN layers at high temperatures as a candidate for in situ monitoring in MOVPEPRALL, C; RUEBESAM, M; WEBER, C et al.Journal of crystal growth. 2014, Vol 397, pp 24-28, issn 0022-0248, 5 p.Article

Plasmonic enhancement of CO₂ conversion to methane using sculptured copper thin films grown directly on TiO₂HYEONSEOK LEE; SUIL IN; HORN, Mark W et al.Thin solid films. 2014, Vol 565, pp 105-110, issn 0040-6090, 6 p.Article

Radical step coverage improvement in directional beam target (DBT) sputterKIM, Jin T; PARK, Young C; LEE, B. J et al.Microelectronic engineering. 2014, Vol 128, pp 85-90, issn 0167-9317, 6 p.Article

Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman ScatteringYANPING SUI; BIN WANG; ZHIDE ZHAO et al.Journal of electronic materials. 2014, Vol 43, Num 7, pp 2715-2722, issn 0361-5235, 8 p.Article

Thermal and plasma enhanced atomic layer deposition of SiO₂ using commercial silicon precursorsPUTKONEN, Matti; BOSUND, Markus; HAIMI, Eero et al.Thin solid films. 2014, Vol 558, pp 93-98, issn 0040-6090, 6 p.Article

Thickness-dependent pitting corrosion behavior in Ni-Nb thin film metallic glassWU, Z. F; CAO, Q. P; MA, Y et al.Thin solid films. 2014, Vol 564, pp 294-298, issn 0040-6090, 5 p.Article

Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxyGUANGXU JU; FUCHI, Shingo; TABUCHI, Masao et al.Journal of crystal growth. 2014, Vol 407, pp 68-73, issn 0022-0248, 6 p.Article

Defect reduction of SiN_x embedded m-plane GaN grown by hydride vapor phase epitaxySEOHWI WOO; MINHO KIM; BYEONGCHAN SO et al.Journal of crystal growth. 2014, Vol 407, pp 6-10, issn 0022-0248, 5 p.Article

Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GAN on sapphire by MOVPEOEHLER, F; SUTHERLAND, D; ZHU, T et al.Journal of crystal growth. 2014, Vol 408, pp 32-41, issn 0022-0248, 10 p.Article

Structural and optical properties of post-annealed atomic-layer-deposited HfO₂ thin films on GaAsBENNETT, N. S; CHERKAOUI, K; WONG, C. S et al.Thin solid films. 2014, Vol 569, pp 104-112, issn 0040-6090, 9 p.Article

Atomic and molecular layer deposition for surface modificationVÄHÄ-NISSI, Mika; SIEVÄNEN, Jenni; SALO, Erkki et al.Journal of solid state chemistry (Print). 2014, Vol 214, pp 7-11, issn 0022-4596, 5 p.Conference Paper

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Characterization of highly anisotropic three-dimensionally nanostructured surfacesSCHMIDT, Daniel.Thin solid films. 2014, Vol 571, pp 364-370, issn 0040-6090, 7 p., 3Conference Paper

Effect on Al:MO₂/In_0.53Ga_0.47As interface (M = Hf, Zr) of trimethyl-aluminum pre-treatment during atomic layer depositionLAMPERTI, A; MOLLE, A; CIANCI, E et al.Thin solid films. 2014, Vol 563, pp 44-49, issn 0040-6090, 6 p.Conference Paper

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